Description
Transcend’s MTE662T M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE662T features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND ash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency. The MTE662T is built with DRAM cache for fast access, and is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles. Transcend also offers the MTE662T-I with wide temperature (-40?~ 85?) capabilities to ensure sustained functionality, enhanced endurance and optimal reliability in mission-critical applications.
- DRAM cache embedded
- Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
- Promised operational reliability in a wide temperature range (from -40? to 85?)
- PCIe Gen 3 x4 interface
- 8-channel (8CH) controller for ultra-high performance
- Supports NVM command
- SLC caching technology
- Built-in LDPC ECC (Error Correction Code) functionality
- Dynamic thermal throttling
- Compliant with RoHS 2.0 standards
Main Specifications
Product Description | Transcend MTE662T-I – SSD – 512 GB – PCIe 3.0 x4 (NVMe) |
Type | Solid state drive – internal |
Capacity | 512 GB |
NAND Flash Memory Type | Single-level cell (SLC) |
Form Factor | M.2 2280 (double-sided) |
Interface | PCIe 3.0 x4 (NVMe) |
Features | NVM Express (NVMe) 1.3, 96-layer 3D NAND technology, 3K P/E cycles (Programme/Erase cycles), Corner Bond technology, thermal sensor, Garbage Collection technology, TRIM support, Bad Block Management, Read Disturbance, Dynamic thermal throttling, LDPC error correction, Advanced Global Wear Leveling, DRAM cache, S.M.A.R.T. |
Dimensions (WxDxH) | 80 mm x 22 mm x 3.58 mm |
Weight | 9 g |
Extended Specifications
General
Device Type | Solid state drive – internal |
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Capacity | 512 GB |
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NAND Flash Memory Type | Single-level cell (SLC) |
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Form Factor | M.2 2280 (double-sided) |
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Interface | PCIe 3.0 x4 (NVMe) |
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Features | NVM Express (NVMe) 1.3, 96-layer 3D NAND technology, 3K P/E cycles (Programme/Erase cycles), Corner Bond technology, thermal sensor, Garbage Collection technology, TRIM support, Bad Block Management, Read Disturbance, Dynamic thermal throttling, LDPC error correction, Advanced Global Wear Leveling, DRAM cache, S.M.A.R.T. |
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Width | 80 mm |
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Depth | 22 mm |
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Height | 3.58 mm |
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Weight | 9 g |
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Performance
Drive Writes Per Day (DWPD) | 2 |
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SSD Endurance | 4400 TB |
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Internal Data Rate | 3500 MBps (read) / 2700 MBps (write) |
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Maximum 4KB Random Write | 355000 IOPS |
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Maximum 4KB Random Read | 340000 IOPS |
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Reliability
Expansion & Connectivity
Compatible Bay | M.2 2280 (double-sided) |
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Power
Power Consumption | 7 Watt (active)
1 Watt (idle) |
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Miscellaneous
Compliant Standards | FCC, RoHS2, BSMI |
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Environmental Parameters
Min Operating Temperature | -40 °C |
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Max Operating Temperature | 85 °C |
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Min Storage Temperature | -40 °C |
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Max Storage Temperature | 85 °C |
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Humidity Range Operating | 5 – 95% |
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Shock Tolerance (operating) | 1500 g @ 0.5 ms |
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Vibration Tolerance (operating) | 20 g @ 7-2000 Hz |
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